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Freescale Semiconductor Technical Data
Document Number: MW7IC008N Rev. 2, 3/2011
RF LDMOS Wideband Integrated Power Amplifier
The MW7IC008N wideband integrated circuit is designed with on--chip matching that makes it usable from 20 to 1000 MHz. This multi--stage structure is rated for 24 to 32 Volt operation and covers most narrow bandwidth communication application formats. Driver Applications * Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA
Frequency 100 MHz @ 11 W CW 400 MHz @ 9 W CW 900 MHz @ 6.5 W CW Gps (dB) 23.5 22.5 23.5 PAE (%) 55 41 34
MW7IC008NT1
100-1000 MHz, 8 W PEAK, 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout) * Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz * Typical Pout @ 1 dB Compression Point 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz Features * Broadband, Single Matching Network from 20 to 1000 MHz * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) * Integrated ESD Protection * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13 inch Reel.
CASE 1894-01 PQFN 8x8 PLASTIC
VTTS1
VTTS2 NC
Quiescent Current Temperature Compensation (1) VGS1 RFinS1 VGS2 RFoutS2/VDS2
VGLS1 NC NC NC RFinS1 VGS1
1 2 3 4 5 6
24 23 22 21 20 19
RFoutS1/VDS1 RFinS2 NC VGS2 VTTS2 18 17 16 15 14 13
7 8 9 10 11 12 VTTS1 VGLS2 NC NC NC NC
NC NC NC NC NC RFoutS2/VDS2
RFoutS1/VDS1
RFinS2
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
(c) Freescale Semiconductor, Inc., 2009, 2011. All rights reserved.
MW7IC008NT1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Operating Junction Temperature 100 MHz CW Operation @ TA = 25C
(3)
Symbol VDSS VGS VDD Tstg TJ CW
Value --0.5, +65 --6.0, +12 32, +0 --65 to +150 150 11 6 5
Unit Vdc Vdc Vdc C C W W W dBm
400 MHz CW Operation @ TA = 25C (3) 900 MHz CW Operation @ TA = 25C (3) Input Power 100 MHz 400 MHz 900 MHz Pin
27 23 38
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case (CW Signal @ 100 MHz) (Case Temperature 82C, Pout = 11 W CW) (CW Signal @ 400 MHz) (Case Temperature 87C, Pout = 9 W CW) (CW Signal @ 900 MHz) (Case Temperature 86C, Pout = 6.5 W CW) Symbol RJC Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA 5.3 4.9 Value (1,2) Unit C/W
4.4 2.7
3.5 3.2
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 1B (Minimum) A (Minimum) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. CW Ratings at the individual frequencies are limited by a 100 year MTTF requirement. See MTTF calculator (referenced in Note 1). (continued)
MW7IC008NT1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Stage 1 -- Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 1 -- On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 5.3 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 25 mAdc, Measured in Functional Test) Stage 2 -- Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) Stage 2 -- On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 75 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Power Gain Power Added Efficiency Input Return Loss VGS(th) VGS(Q) VDS(on) 1.3 2 0.1 2 2.7 0.3 2.8 3.5 1 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc VGS(th) VGS(Q) 1.3 2 2 2.8 2.8 3.5 Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W CW, f = 900 MHz Gps PAE IRL 21.5 30 -- Gps (dB) 23.5 22.5 23.5 23.5 34 --15 PAE (%) 55 41 34 31.5 -- --11 dB % dB IRL (dB) --20 --17 --15 (continued)
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency 100 MHz @ 11 W CW 400 MHz @ 9 W CW 900 MHz @ 6.5 W CW 1. Part internally matched both on input and output.
MW7IC008NT1 RF Device Data Freescale Semiconductor 3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Characteristic IMD Symmetry @ 6.8 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (1) (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (1) (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 500--1000 MHz Bandwidth @ Pout = 6 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) Symbol Symbol IMDsym Min Min -- Typ Typ 0.1 Max Max -- Unit Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, 100--1000 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
0.1 1.35 0.024 0.005
-- -- -- --
MHz dB dB/C dB/C
Typical CW Performances -- 100 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 11 W CW, f = 100 MHz Power Gain Power Added Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW Gps PAE IRL P1dB -- -- -- -- 23.5 55 --20 11 -- -- -- -- dB % dB W
Typical CW Performances -- 400 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 9 W CW, f = 400 MHz Power Gain Power Added Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW Gps PAE IRL P1dB -- -- -- -- 22.5 41 --17 9 -- -- -- -- dB % dB W
Typical CW Performances -- 900 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W CW, f = 900 MHz Power Gain Power Added Efficiency Input Return Loss Pout @ 1 dB Compression Point, CW 1. Not recommended for wide instantaneous bandwidth modulated signals. Gps PAE IRL P1dB -- -- -- -- 23.5 34 --15 6.5 -- -- -- -- dB % dB W
MW7IC008NT1 4 RF Device Data Freescale Semiconductor
VDD1
VGG2
GND C17 R12 C16 C15 R8 C9 C8 C7 C5 L4 C14 L5 C10 L7 L6 C13 R11 R10 R9 C12 VDD2
R1
C3
C11
L2 L1
C2 C1
C4 L3 R2 R3 C6 VGG1 GND
R4 R5 R6 MW7IC008N Rev. 1a R7
Figure 3. MW7IC008NT1 Test Circuit Component Layout
Table 6. MW7IC008NT1 Test Circuit Component Designations and Values
Part C1 C2, C15 C3, C16 C4, C5, C7, C8, C10, C11, C12, C14 C6, C17 C9 C13 L1, L7 L2, L6 L3 L4, L5 R1, R12 R2, R3, R4 R5*, R9* R6 R7, R11 R8 R10 PCB *Add for temperature compensation Description 0.01 F Chip Capacitor 0.1 F Chip Capacitors 10 F Chip Capacitors 0.01 F Chip Capacitors 1 F, 35 V Tantalum Capacitors 2.2 pF Chip Capacitor 3.3 pF Chip Capacitor 150 nH Ceramic Chip Inductors 180 nH Ceramic Chip Inductors 1.6 nH Inductor 5.1 nH Inductors 510 , 1/10 W Chip Resistors 91 , 1/8 W Chip Resistors 0 , 2.5 A Chip Resistors 10 K, 1/8 W Chip Resistor 12 K, 1/8 W Chip Resistors 43 , 1/8 W Chip Resistor 15 K, 1/8 W Chip Resistor 0.020, r = 3.5 Part Number GRM3195C1E103JA01 GRM219F51H104ZA01 GRM55DR61H106KA88L C0805C103K5RAC TAJA105K035R ATC600S2R2CT250XT ATC600S3R3BT250XT LL2012--FHLR15J LL2012--FHLR18J 0603HC--1N6XJLW 0603HP--5N1XJLW RR1220P--511--B--T5 CRCW080591R0FKEA CRCW08050000Z0EA CRCW080510K0JNEA CRCW080512K0JNEA CRCW080543R0FKEA CRCW080515K0JNEA RO4350 Manufacturer Murata Murata Murata Kemet AVX ATC ATC Toko Toko Coilcraft Coilcraft Susumu Vishay Vishay Vishay Vishay Vishay Vishay Rogers
MW7IC008NT1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
29 28 27 Gps, POWER GAIN (dB) 26 25 24 23 22 21 20 19 100 200 Pout 300 400 500 600 700 800 900 f, FREQUENCY (MHz) IRL Gps VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Fixed Pin = 14.6 dBm CW PAE 70 60 50 40 30 --5 --15 --20 --25 --30 1000 IRL, INPUT RETURN LOSS (dB) --10 PAE, POWER ADDED EFFICIENCY (%)
14 12 10 8 6 4
Figure 4. Broadband Performance @ Pin = 14.6 dBm CW
IMD, INTERMODULATION DISTORTION (dBc) --10 --20 --30 --40 IM7--L --50 IM7--U --60 1 10 TWO--TONE SPACING (MHz) 100 200 IM3--L IM3--U IM5--U IM5--L
VDD = 28 Vdc, Pout = 6.8 W (PEP) IDQ1 = 25 mA, IDQ2 = 75 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 900 MHz
Figure 5. Intermodulation Distortion Products versus Two-Tone Spacing
26 25 Gps, POWER GAIN (dB) 24 23 22 21 20 19 18 1 PAE Gps VDD = 28 Vdc IDQ1 = 25 mA IDQ2 = 75 mA 400 MHz 900 MHz 100 MHz 90 PAE, POWER ADDED EFFICIENCY (%) 80 70 60 50 100 MHz 900 MHz 10 Pout, OUTPUT POWER (WATTS) CW 20 40 400 MHz 30 20 10
Figure 6. Power Gain and Power Added Efficiency versus Output Power
MW7IC008NT1 6 RF Device Data Freescale Semiconductor
Pout, OUTPUT POWER (WATTS)
TYPICAL CHARACTERISTICS
30 20 MHz 25 20 GAIN (dB) 15 10 5 0 0 200 400 600 800 1000 1200 1400 f, FREQUENCY (MHz) IRL VDD = 28 Vdc Pin = --10 dBm IDQ1 = 25 mA IDQ2 = 75 mA Gain --6 --12 --18 --24 --30 --36 1600 IRL (dB) 0
Figure 7. Broadband Frequency Response
MW7IC008NT1 RF Device Data Freescale Semiconductor 7
VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Pout = 11 W @ 100 MHz, 9 W @ 400 MHz, 6.5 W @ 900 MHz f MHz 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 Zin = Zin 49.78 + j1.07 48.96 + j1.44 48.00 + j1.54 46.67 + j1.36 45.30 + j0.91 43.93 + j0.11 42.53 -- j0.86 41.38 -- j2.16 40.30 -- j3.71 39.38 -- j5.44 38.43 -- j7.11 37.94 -- j8.71 37.49 -- j10.52 37.31 -- j12.42 37.00 -- j14.03 36.74 -- j15.64 36.57 -- j17.09 36.37 -- j18.59 36.12 -- j20.06 35.58 -- j21.43 35.00 -- j22.79 34.53 -- j24.39 33.53 -- j25.97 32.67 -- j27.84 31.61 -- j29.89 30.61 -- j32.34 29.55 -- j34.81 28.23 -- j37.61 27.34 -- j40.59 Zload 47.87 -- j9.85 49.12 -- j5.44 49.09 -- j2.66 48.63 -- j0.79 47.73 + j0.49 46.60 + j1.22 45.63 + j1.43 44.97 + j1.13 45.04 + j0.70 45.23 + j0.77 44.80 + j1.29 44.32 + j1.48 43.57 + j1.51 43.19 + j1.32 42.61 + j0.77 42.25 + j0.39 41.90 + j0.03 41.67 -- j0.41 41.77 -- j1.10 41.82 -- j1.60 41.90 -- j2.01 42.26 -- j2.43 42.51 -- j2.80 42.74 -- j2.99 43.10 -- j3.11 43.52 -- j3.19 43.86 -- j3.13 44.03 -- j3.03 44.33 -- j2.67
Device input impedance as measured from gate to ground. Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Zload =
Z
in
Z
load
Figure 8. Series Equivalent Input and Load Impedance
MW7IC008NT1 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
MW7IC008NT1 RF Device Data Freescale Semiconductor 9
MW7IC008NT1 10 RF Device Data Freescale Semiconductor
MW7IC008NT1 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN1977 Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family * AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Aug. 2009 Sept. 2009 * Initial Release of Data Sheet * Modified Fig. 3, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values to include temperature compensation options, p. 5 * Fig. 3, Test Circuit Component Layout, corrected VDD1 to VGG1, p. 5 * Table 6, Test Circuit Component Designations and Values, C6, C17: updated description from "1 F Tantalum Capacitors" to "1 F, 35 V Tantalum Capacitors"; L1, L7, L2, L6: corrected manufacturer from Coilcraft to Toko; L3: corrected part number from "0603HC--1N6XJLC" to "0603HC--1N6XJLW"; L4, L5: corrected part number from "100B100JT500XT" to "0603HP--5N1XJLW"; R1, R12: updated description from "510 Chip Resistors" to "510 , 1/10 W Chip Resistors", p. 5 2 Mar. 2011 * Updated frequency in overview paragraph from "100 to 1000 MHz" to "20 to 1000 MHz" to reflect lower 20 MHz capability and narrow bandwidth modulation, p. 1 * Updated IMDsym Typical value from 180 MHz to 0.1 MHz and VBWres Typical value from 210 MHz to 0.1 MHz; modified Footnote 1 to reflect limited device capability regarding wide video bandwidth, Typical Performance table, p. 4 Description
MW7IC008NT1 12 RF Device Data Freescale Semiconductor
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MW7IC008NT1
Document Number: RF Device Data MW7IC008N Rev. 2, 3/2011 Freescale Semiconductor
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